Scientific Image - Indium Arsenide Nanowire Field-Effect Transistor

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Description: 

This scanning electron microscope image shows an indium arsenide (InAs) nanowire field-effect transistor.

Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

• SIZE: The nanowire at center is about 5 µm long.

• IMAGING TOOL: Scanning electron microscope

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Credits

Owning institution: 
Shadi Dayeh, University of California at San Diego - Attribution is required. The creator listed here has made this image available to NISE Network partners for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and websites.
Permissions: 

The creator listed above has made this image available to NISE Network partners for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and websites.