This scanning electron micrograph shows a gallium nitride nanowire photodetector device with a zinc oxide core grown by e-beam lithography.
The geometry and structure of nanowires make them both sensitive to light and efficient low-noise signaling devices, so they are ideally suited for applications involving light—such as detection, imaging, information storage, and intrachip optical communications. In addition, different types of nanowires can be combined to create devices sensitive to different wavelengths of light.
Dr. Xinyu Bao, University of California at San Diego
This is a NISE Network product:
The nanowire has a diameter of about 200 nm.
This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.