Indium Arsenide Nanowires

Indium Arsenide Nanowires
This is scanning electron microscope image of indium arsenide nanowires. Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The width of the sample imaged is about 10 ┬Ám.

Permissions:

This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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