Indium Arsenide Nanowire Field-Effect Transistor

Indium Arsenide Nanowire Field-Effect Transistor
This scanning electron microscope image shows an indium arsenide (InAs) nanowire field-effect transistor. Semiconductor nanowires such as those of indium arsenide (InAs) offer exciting possibilities for the electronic systems of the future because of the unique possibilities they offer for controlling fundamental properties during generation. A wide range of nanowire-based devices and systems, including transistors, circuits, light emitters, and sensors, have already been explored. Nanowire field-effect transistors have been of particular interest as vehicles for the investigation of basic carrier-transport behavior and as the heart of new generations of high-performance electronic devices.

Minimum credit: 

Shadi Dayeh, University of California at San Diego

Size: 

The nanowire at center is about 5 ┬Ám long.

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This image was created by another institution, not the NISE Network. This image is available to NISE Network member organizations for non-profit educational use only. Uses may include but are not limited to reproduction and distribution of copies, creation of derivative works, and combination with other assets to create exhibitions, programs, publications, research, and Web sites. Minimum credit required.

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